SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
InGaN光致发光性质与温度的关系
樊志军; 刘祥林; 万寿科; 王占国
2001
Source Publication半导体学报
Volume22Issue:5Pages:569
Abstract分析了用金属有机物气相外延方法(MOVPE)在蓝宝石衬底上生长的铟镓氮(InGaN)的光致发光(PL)性质。发现在4.7K至300K范围内,随着温度升高,InGaN带边辐射向低能方向移动,峰值变化基本符合Varshni经验公式;同时InGaN发光强度虽有所衰减,但比GaN衰减程度小,分析了导致GaN和InGaN光致发光减弱的可能因素。
metadata_83中科院半导体所
Subject Area半导体材料
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:532979
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18693
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
樊志军,刘祥林,万寿科,等. InGaN光致发光性质与温度的关系[J]. 半导体学报,2001,22(5):569.
APA 樊志军,刘祥林,万寿科,&王占国.(2001).InGaN光致发光性质与温度的关系.半导体学报,22(5),569.
MLA 樊志军,et al."InGaN光致发光性质与温度的关系".半导体学报 22.5(2001):569.
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