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MOVPE生长Ga_xAl_yIn_(1-x-y)N的准热力学模型(英文)
陆大成; 段树坤
2001
Source Publication半导体学报
Volume22Issue:6Pages:677
Abstract提出一个以TMGa、TMAl、TMIn和NH_3为源,用MOVPE方法生长Ga_xAl_yIn_(1-x-y)N四元合金的推热力学模型。该模型假设四元合金是由氨和Ⅲ族元素之间反应合成的,其特点是考虑了NH_3的分解效率,并用N、H、Ga、Al及In的摩尔分数代替惯用的分压来表示质量守衡方程。计算了各种生长条件对于与GaN晶格匹配的Ga_xAl_yIn_(1-x-y)N四元合金与注入反应室的Ⅲ族金属有机化合物之间关系的影响。计算表明,几乎所有达到生长表面的Al和Ga都并入到Ga_xAl_yIn_(1-x-y)N四元合金中,而In则富集在气相。为增强铟的并入,应采用低的生长温度,高的Ⅴ/Ⅲ比,氮载气而且须要设法降低到达生长界面前氨的分解。
metadata_83中科院半导体所
Subject Area半导体材料
Funding Organization国家973计划
Indexed ByCSCD
Language中文
CSCD IDCSCD:532999
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18685
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
陆大成,段树坤. MOVPE生长Ga_xAl_yIn_(1-x-y)N的准热力学模型(英文)[J]. 半导体学报,2001,22(6):677.
APA 陆大成,&段树坤.(2001).MOVPE生长Ga_xAl_yIn_(1-x-y)N的准热力学模型(英文).半导体学报,22(6),677.
MLA 陆大成,et al."MOVPE生长Ga_xAl_yIn_(1-x-y)N的准热力学模型(英文)".半导体学报 22.6(2001):677.
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