SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
N型6H-SiCMOS电容的电学特性
王姝睿; 刘忠立; 梁桂荣; 梁秀芹; 马红芝
2001
Source Publication半导体学报
Volume22Issue:6Pages:755-759
metadata_83中科院半导体所
Subject Area微电子学
Indexed ByCSCD
Language中文
CSCD IDCSCD:533015
Date Available2010-11-23
Citation statistics
Cited Times:1[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18673
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
王姝睿,刘忠立,梁桂荣,等. N型6H-SiCMOS电容的电学特性[J]. 半导体学报,2001,22(6):755-759.
APA 王姝睿,刘忠立,梁桂荣,梁秀芹,&马红芝.(2001).N型6H-SiCMOS电容的电学特性.半导体学报,22(6),755-759.
MLA 王姝睿,et al."N型6H-SiCMOS电容的电学特性".半导体学报 22.6(2001):755-759.
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