SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
部分耗尽CMOS/SOI工艺
刘新宇; 孙海峰; 陈焕章; 扈焕章; 海潮和; 刘忠立; 和致经; 吴德馨
2001
Source Publication半导体学报
Volume22Issue:6Pages:806
Abstract对部分耗尽CMOS/SOI工艺进行了研究,成功地开发出成套部分耗尽CMOS/SOI抗辐照工艺。其关键工艺技术包括
metadata_83中科院微电子中心;中科院半导体所
Subject Area微电子学
Indexed ByCSCD
Language中文
CSCD IDCSCD:533026
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18669
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
刘新宇,孙海峰,陈焕章,等. 部分耗尽CMOS/SOI工艺[J]. 半导体学报,2001,22(6):806.
APA 刘新宇.,孙海峰.,陈焕章.,扈焕章.,海潮和.,...&吴德馨.(2001).部分耗尽CMOS/SOI工艺.半导体学报,22(6),806.
MLA 刘新宇,et al."部分耗尽CMOS/SOI工艺".半导体学报 22.6(2001):806.
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