SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
离子注入氮化薄SiO_2栅介质的特性
王延峰; 刘忠立
2001
Source Publication半导体学报
Volume22Issue:7Pages:881
Abstract研究了通过多晶硅栅注入氮离子氮化10nm薄栅SiO_2的特性。实验证明氮化后的薄SiO_2栅具有明显的抗硼穿透能力,它在FN应力下的氧化物陷阱电荷产生速率和正向FN应力下的慢态产生速率比常规栅介质均有显著下降,氮化栅介质的击穿电荷(Q_(bd))比常规栅介质提高了20%。栅介质性能改善的可能原因是由于离子注入工艺在栅SiO_2中引进的N~+离子形成了更稳定的键所致。
metadata_83中科院半导体所
Subject Area微电子学
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:533040
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18659
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
王延峰,刘忠立. 离子注入氮化薄SiO_2栅介质的特性[J]. 半导体学报,2001,22(7):881.
APA 王延峰,&刘忠立.(2001).离子注入氮化薄SiO_2栅介质的特性.半导体学报,22(7),881.
MLA 王延峰,et al."离子注入氮化薄SiO_2栅介质的特性".半导体学报 22.7(2001):881.
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