SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
高压 Ti/ 6H- SiC肖特基势垒二极管(英文)
王姝睿; 刘忠立; 李国花; 于芳; 刘焕章
2001
Source Publication半导体学报
Volume22Issue:8Pages:962
Abstract在N型6H-SiC外延片上,通过热蒸发,制作Ti/6H-SiC肖特基势垒二极管(SBD)。通过化学气相淀积,进行同质外延生长,详细测量并分析了肖特基二极管的电学特性,该肖特基二极管具有较好的整流特性。反向击穿电压约为400V,室温下,反向电压V_R=200V时,反向漏电流J_R低于1×10~(-4)A/cm~2。采用Ne离子注入形成非晶层,作为边缘终端,二极管的击穿电压增加到约为800V。
metadata_83中科院半导体所
Subject Area微电子学
Indexed ByCSCD
Language中文
CSCD IDCSCD:533057
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18653
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
王姝睿,刘忠立,李国花,等. 高压 Ti/ 6H- SiC肖特基势垒二极管(英文)[J]. 半导体学报,2001,22(8):962.
APA 王姝睿,刘忠立,李国花,于芳,&刘焕章.(2001).高压 Ti/ 6H- SiC肖特基势垒二极管(英文).半导体学报,22(8),962.
MLA 王姝睿,et al."高压 Ti/ 6H- SiC肖特基势垒二极管(英文)".半导体学报 22.8(2001):962.
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