SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
玻璃中CdSeS量子点的结构和光学性质
江德生; 李国华; 韩和相; 贾锐; 孙宝权; 王若桢; 孙萍
2001
Source Publication半导体学报
Volume22Issue:8Pages:996
Abstract用两步退火法在掺CdSeS的玻璃中制备了高密度的量子点,均匀性较好。量子点尺寸随第二步退火时间加长而增大,但组份基本不变。研究了量子点光学性质与退火时间的依赖关系,证明光致发光谱中的低能峰与量子点表面缺陷态有关。量子点尺寸越小,比表面越大,该峰相对强度越大。
metadata_83中科院半导体所;北京师范大学物理系
Subject Area半导体物理
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:533064
Date Available2010-11-23
Citation statistics
Cited Times:8[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18647
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
江德生,李国华,韩和相,等. 玻璃中CdSeS量子点的结构和光学性质[J]. 半导体学报,2001,22(8):996.
APA 江德生.,李国华.,韩和相.,贾锐.,孙宝权.,...&孙萍.(2001).玻璃中CdSeS量子点的结构和光学性质.半导体学报,22(8),996.
MLA 江德生,et al."玻璃中CdSeS量子点的结构和光学性质".半导体学报 22.8(2001):996.
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