SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
在蓝宝石衬底两个相反c面同时生长氮化镓薄膜的差异
韩培德; 段晓峰; 孙家龙; 张泽; 王占国
2001
Source Publication半导体学报
Volume22Issue:8Pages:1030
Abstract运用金属有机气相外延设备,在蓝宝石衬底两相相反取向的c面上同时生长六方相氮化镓薄膜。对此进行了扫描电子显微镜、俄歇电子能谱、透射电子显微镜的分析和研究。发现这两个薄膜有许多不同之处。
metadata_83中科院半导体所;中科院凝聚态物理中心;天津市半导体技术所
Subject Area半导体材料
Funding Organization国家863计划,国家自然科学基金,国家973计划
Indexed ByCSCD
Language中文
CSCD IDCSCD:533071
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18643
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
韩培德,段晓峰,孙家龙,等. 在蓝宝石衬底两个相反c面同时生长氮化镓薄膜的差异[J]. 半导体学报,2001,22(8):1030.
APA 韩培德,段晓峰,孙家龙,张泽,&王占国.(2001).在蓝宝石衬底两个相反c面同时生长氮化镓薄膜的差异.半导体学报,22(8),1030.
MLA 韩培德,et al."在蓝宝石衬底两个相反c面同时生长氮化镓薄膜的差异".半导体学报 22.8(2001):1030.
Files in This Item:
File Name/Size DocType Version Access License
5369.pdf(329KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[韩培德]'s Articles
[段晓峰]'s Articles
[孙家龙]'s Articles
Baidu academic
Similar articles in Baidu academic
[韩培德]'s Articles
[段晓峰]'s Articles
[孙家龙]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[韩培德]'s Articles
[段晓峰]'s Articles
[孙家龙]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.