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6H-SiC高压肖特基势垒二极管
王姝睿; 刘忠立; 徐萍; 葛永才; 姚文卿; 高翠华
2001
Source Publication半导体学报
Volume22Issue:8Pages:1052
Abstract在可商业获得的N型6H-SiC晶片上,通过化学气相淀积,进行同质外延生长,在此结构材料上,通过热蒸发,制作Ni/6H-SiC肖特基势垒二极管。测量并分析了肖特基二极管的电学特性,结果表明,肖特基二极管具有较好的整流特性
metadata_83中科院半导体所
Subject Area微电子学
Indexed ByCSCD
Language中文
CSCD IDCSCD:533076
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18639
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
王姝睿,刘忠立,徐萍,等. 6H-SiC高压肖特基势垒二极管[J]. 半导体学报,2001,22(8):1052.
APA 王姝睿,刘忠立,徐萍,葛永才,姚文卿,&高翠华.(2001).6H-SiC高压肖特基势垒二极管.半导体学报,22(8),1052.
MLA 王姝睿,et al."6H-SiC高压肖特基势垒二极管".半导体学报 22.8(2001):1052.
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