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MOCVD生长InGaAs/InGaAsP多量子阱光泵微碟激光器
吴根柱; 张子莹; 任大翠; 张兴德
2001
Source Publication半导体学报
Volume22Issue:8Pages:1057
Abstract用MOCVD方法生长了InGaAs/InGaAsP多量子阱微碟激光器外延片,用光刻、干法刻蚀和湿法刻蚀等现代化的微加工技术制备出直径9.5μm的InGaAs/InGaAsP微碟激光器,并详细介绍了整个制备工艺过程。在液氮温度下用氩离子激光器泵浦方式实现了低阈值激射,测出单个微碟激光器的阈值光功率为150μW,激射波长约为1.6μm,品质因数Q=800,激射光谱线宽为2nm,同时指出微碟激光器射线宽比F-P普通激光器宽很多是由于其品质因数很高造成的。
metadata_83长春光学精密机械学院;中科院半导体所国家光电子工艺中心
Subject Area半导体材料
Funding Organization兵器科技预研基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:533077
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18637
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
吴根柱,张子莹,任大翠,等. MOCVD生长InGaAs/InGaAsP多量子阱光泵微碟激光器[J]. 半导体学报,2001,22(8):1057.
APA 吴根柱,张子莹,任大翠,&张兴德.(2001).MOCVD生长InGaAs/InGaAsP多量子阱光泵微碟激光器.半导体学报,22(8),1057.
MLA 吴根柱,et al."MOCVD生长InGaAs/InGaAsP多量子阱光泵微碟激光器".半导体学报 22.8(2001):1057.
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