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分子束外延生长高应变单量子阱激光器(英文)
潘钟; 李联合; 徐应强; 杜云; 林耀望
2001
Source Publication半导体学报
Volume22Issue:9Pages:1097
Abstract采用分子束外延方法研究了高应变InGaAs/GaAs量子阱的生长技术。将InGaAs/GaAs量子阱的室温光致发光波长拓展至1160nm,其光致发光峰半峰宽只有22meV。研制出1120nm室温连续工作的InGaAs/GaAs单量子阱激光器。对于100μm条宽和800μm腔长的激光器,最大线性输出功率达到200mW,斜率效率达到0.84mW/mA,最低阈值电流密度为450A/cm~2,特征温度达到90K。
metadata_83中科院半导体所
Subject Area半导体材料
Funding Organization国家自然科学基金,国家973计划
Indexed ByCSCD
Language中文
CSCD IDCSCD:533084
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18635
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
潘钟,李联合,徐应强,等. 分子束外延生长高应变单量子阱激光器(英文)[J]. 半导体学报,2001,22(9):1097.
APA 潘钟,李联合,徐应强,杜云,&林耀望.(2001).分子束外延生长高应变单量子阱激光器(英文).半导体学报,22(9),1097.
MLA 潘钟,et al."分子束外延生长高应变单量子阱激光器(英文)".半导体学报 22.9(2001):1097.
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