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RF-MBE生长AlGaN/GaN极化感应二维电子气材料
孙殿照; 胡国新; 王晓亮; 刘宏新; 刘成海; 曾一平; 李晋闽; 林兰英
2001
Source Publication半导体学报
Volume22Issue:11Pages:1425
Abstract用射频等离子体辅助分子束外延技术(RF-MBE)在C面蓝宝石衬底上外延了高质量的GaN膜以及AlGaN/GaN极化感应二维电子气材料。所外延的GaN膜室温背景电子浓度为2×10~(17)cm~(-3),相应的电子迁移率为177cm~2/(V·s);GaN(0002)X射线衍射摇摆曲线半高宽(FWHM)为6';AlGaN/GaN极化感应二维电子气材料的室温电子迁移率为730cm~2(V·s),相应的电子气面密度为7.6×10~(12)cm~(-2);用此二维电子气材料制作的异质结场效应晶体管(HFET)室温跨导达50mS/mm(栅长1μm),截止频率达13GHz(栅长0.5μm)。
metadata_83中科院半导体所
Subject Area光电子学
Indexed ByCSCD
Language中文
CSCD IDCSCD:533151
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18619
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
孙殿照,胡国新,王晓亮,等. RF-MBE生长AlGaN/GaN极化感应二维电子气材料[J]. 半导体学报,2001,22(11):1425.
APA 孙殿照.,胡国新.,王晓亮.,刘宏新.,刘成海.,...&林兰英.(2001).RF-MBE生长AlGaN/GaN极化感应二维电子气材料.半导体学报,22(11),1425.
MLA 孙殿照,et al."RF-MBE生长AlGaN/GaN极化感应二维电子气材料".半导体学报 22.11(2001):1425.
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