SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
MSM光探测器的直流特性
武术; 林世鸣; 刘文楷
2001
Source Publication半导体学报
Volume22Issue:11Pages:1462
Abstract在稳态条件下金属-半导体-金属(MSM)光探测器的光电流一维模型可以通过求解电流连续方程和传输方程来建立并求解。在这种条件下,器件内部的载流子分布情况和总体光电流可以得到解析解而不用数值方法求解。该文从电流连续方程和传输方程出发详细推导了这一过程,并将这一结果应用于具体的InGaAs MSM光探测器的直流等效电路模型上,取得了很好的效果。
metadata_83中科院半导体所
Subject Area光电子学
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:533158
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18615
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
武术,林世鸣,刘文楷. MSM光探测器的直流特性[J]. 半导体学报,2001,22(11):1462.
APA 武术,林世鸣,&刘文楷.(2001).MSM光探测器的直流特性.半导体学报,22(11),1462.
MLA 武术,et al."MSM光探测器的直流特性".半导体学报 22.11(2001):1462.
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