SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
硅片发生室温键合所需的平整度条件
韩伟华; 余金中
2001
Source Publication半导体学报
Volume22Issue:12Pages:1516
Abstract根据薄板弹性力学,推导了室温键合过程中硅片接触表面缝隙封闭的临界条件。硅片的表面起伏幅度、起伏的空间波长、表面张力、材料弹性和硅片厚度都是影响接触表面缝隙封闭的重要因素。越薄的硅片越容易室温键合。
metadata_83中科院半导体所
Subject Area光电子学
Funding Organization国家973计划,国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:533167
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18613
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
韩伟华,余金中. 硅片发生室温键合所需的平整度条件[J]. 半导体学报,2001,22(12):1516.
APA 韩伟华,&余金中.(2001).硅片发生室温键合所需的平整度条件.半导体学报,22(12),1516.
MLA 韩伟华,et al."硅片发生室温键合所需的平整度条件".半导体学报 22.12(2001):1516.
Files in This Item:
File Name/Size DocType Version Access License
5354.pdf(242KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[韩伟华]'s Articles
[余金中]'s Articles
Baidu academic
Similar articles in Baidu academic
[韩伟华]'s Articles
[余金中]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[韩伟华]'s Articles
[余金中]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.