SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
CMOS集成电路用Φ150-200mm外延硅材料
王启元; 林兰英; 何自强; 龚义元; 蔡田海; 郁元桓; 何龙珠; 高秀峰; 王建华; 邓惠芳
2001
Source Publication半导体学报
Volume22Issue:12Pages:1538
Abstract报道了Φ150mm CMOS硅外延材料的研究开发及集成电路应用成果,对Φ200mmP/P~-硅外延材料进行了初步探索研究。Φ150mm P/P~+硅外延片实现了批量生产,并成功应用于集成电路生产线,芯片成品率大于80%。硅外延片的参数指标能满足集成电路制造要求。
metadata_83中科院半导体所;中科院微电子中心
Subject Area半导体材料
Funding Organization国家科技攻关项目
Indexed ByCSCD
Language中文
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18611
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
王启元,林兰英,何自强,等. CMOS集成电路用Φ150-200mm外延硅材料[J]. 半导体学报,2001,22(12):1538.
APA 王启元.,林兰英.,何自强.,龚义元.,蔡田海.,...&邓惠芳.(2001).CMOS集成电路用Φ150-200mm外延硅材料.半导体学报,22(12),1538.
MLA 王启元,et al."CMOS集成电路用Φ150-200mm外延硅材料".半导体学报 22.12(2001):1538.
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