SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
氮化H_2-O_2合成薄栅氧抗辐照特性
刘新宇; 刘运龙; 孙海锋; 海潮和; 吴德馨; 和致经; 刘忠立
2001
Source Publication半导体学报
Volume22Issue:12Pages:1596
metadata_83中科院微电子中心;中科院半导体所
Subject Area微电子学
Indexed ByCSCD
Language中文
CSCD IDCSCD:533184
Date Available2010-11-23
Citation statistics
Cited Times:4[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18605
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
刘新宇,刘运龙,孙海锋,等. 氮化H_2-O_2合成薄栅氧抗辐照特性[J]. 半导体学报,2001,22(12):1596.
APA 刘新宇.,刘运龙.,孙海锋.,海潮和.,吴德馨.,...&刘忠立.(2001).氮化H_2-O_2合成薄栅氧抗辐照特性.半导体学报,22(12),1596.
MLA 刘新宇,et al."氮化H_2-O_2合成薄栅氧抗辐照特性".半导体学报 22.12(2001):1596.
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