Growth of SiGe Films by Cold-wall UHV/CVD Using GeH_4 and Si_2H_6

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Growth of SiGe Films by Cold-wall UHV/CVD Using GeH_4 and Si_2H_6
	Cheng Buwen; Li Daizong; Huang Changjun; Zhang Chunhui; Yu Zhuo; Wang Yutian; Yu Jinzhong; Yang Qinqing; Wang Qiming
	2000
Source Publication	Semiconductor Photonics and Technology
Volume	6 Issue:3 Pages:134
metadata_83	中科院半导体所
Subject Area	光电子学
Funding Organization	国家自然科学基金,国家863计划
Indexed By	CSCD
Language	英语
CSCD ID	CSCD:533210
Date Available	2010-11-23
Citation statistics
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/18603
Collection	中国科学院半导体研究所（2009年前）
Recommended Citation GB/T 7714	Cheng Buwen,Li Daizong,Huang Changjun,et al. Growth of SiGe Films by Cold-wall UHV/CVD Using GeH_4 and Si_2H_6[J]. Semiconductor Photonics and Technology,2000,6(3):134.
APA	Cheng Buwen.,Li Daizong.,Huang Changjun.,Zhang Chunhui.,Yu Zhuo.,...&Wang Qiming.(2000).Growth of SiGe Films by Cold-wall UHV/CVD Using GeH_4 and Si_2H_6.Semiconductor Photonics and Technology,6(3),134.
MLA	Cheng Buwen,et al."Growth of SiGe Films by Cold-wall UHV/CVD Using GeH_4 and Si_2H_6".Semiconductor Photonics and Technology 6.3(2000):134.

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