Knowledge Management System Of Institute of Semiconductors,CAS
Growth of SiGe Films by Cold-wall UHV/CVD Using GeH_4 and Si_2H_6 | |
Cheng Buwen![]() ![]() | |
2000 | |
Source Publication | Semiconductor Photonics and Technology
![]() |
Volume | 6Issue:3Pages:134 |
metadata_83 | 中科院半导体所 |
Subject Area | 光电子学 |
Funding Organization | 国家自然科学基金,国家863计划 |
Indexed By | CSCD |
Language | 英语 |
CSCD ID | CSCD:533210 |
Date Available | 2010-11-23 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/18603 |
Collection | 中国科学院半导体研究所(2009年前) |
Recommended Citation GB/T 7714 | Cheng Buwen,Li Daizong,Huang Changjun,et al. Growth of SiGe Films by Cold-wall UHV/CVD Using GeH_4 and Si_2H_6[J]. Semiconductor Photonics and Technology,2000,6(3):134. |
APA | Cheng Buwen.,Li Daizong.,Huang Changjun.,Zhang Chunhui.,Yu Zhuo.,...&Wang Qiming.(2000).Growth of SiGe Films by Cold-wall UHV/CVD Using GeH_4 and Si_2H_6.Semiconductor Photonics and Technology,6(3),134. |
MLA | Cheng Buwen,et al."Growth of SiGe Films by Cold-wall UHV/CVD Using GeH_4 and Si_2H_6".Semiconductor Photonics and Technology 6.3(2000):134. |
Files in This Item: | ||||||
File Name/Size | DocType | Version | Access | License | ||
5349.pdf(179KB) | 限制开放 | -- | Application Full Text |
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment