SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Si(001)衬底上方形3C-SiC岛的LPCVD生长
孙国胜; 罗木昌; 王雷; 朱世荣; 李晋闽; 林兰英
2001
Source Publication材料科学与工艺
Volume9Issue:3Pages:253
metadata_83中科院半导体所
Subject Area半导体材料
Funding Organization国家自然科学基金,国家973计划
Indexed ByCSCD
Language中文
CSCD IDCSCD:547991
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18587
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
孙国胜,罗木昌,王雷,等. Si(001)衬底上方形3C-SiC岛的LPCVD生长[J]. 材料科学与工艺,2001,9(3):253.
APA 孙国胜,罗木昌,王雷,朱世荣,李晋闽,&林兰英.(2001).Si(001)衬底上方形3C-SiC岛的LPCVD生长.材料科学与工艺,9(3),253.
MLA 孙国胜,et al."Si(001)衬底上方形3C-SiC岛的LPCVD生长".材料科学与工艺 9.3(2001):253.
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