SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
RF-MBE生长AlGaN/GaN二维电子气材料
胡国新; 孙殿照; 王晓亮; 刘宏新; 刘成海; 曾一平; 李晋闽; 林兰英
2001
Source Publication材料科学与工艺
Volume9Issue:3Pages:316
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:548008
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18585
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
胡国新,孙殿照,王晓亮,等. RF-MBE生长AlGaN/GaN二维电子气材料[J]. 材料科学与工艺,2001,9(3):316.
APA 胡国新.,孙殿照.,王晓亮.,刘宏新.,刘成海.,...&林兰英.(2001).RF-MBE生长AlGaN/GaN二维电子气材料.材料科学与工艺,9(3),316.
MLA 胡国新,et al."RF-MBE生长AlGaN/GaN二维电子气材料".材料科学与工艺 9.3(2001):316.
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