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a-SiCx∶H和β-SiC中Er缺陷结构及其1.54μm发光探索
薛俊明; 孙钟林; 刘志钢; 周伟
2000
Source Publication电子学报
Volume28Issue:8Pages:135
metadata_83南开大学光电子所;中科院半导体所
Subject Area半导体材料
Funding Organization材料科学开放实验室基金,光学信息技术科学教育部开放实验室基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:580115
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18561
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
薛俊明,孙钟林,刘志钢,等. a-SiCx∶H和β-SiC中Er缺陷结构及其1.54μm发光探索[J]. 电子学报,2000,28(8):135.
APA 薛俊明,孙钟林,刘志钢,&周伟.(2000).a-SiCx∶H和β-SiC中Er缺陷结构及其1.54μm发光探索.电子学报,28(8),135.
MLA 薛俊明,et al."a-SiCx∶H和β-SiC中Er缺陷结构及其1.54μm发光探索".电子学报 28.8(2000):135.
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