SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
硅基MIS隧道二极管的研究
俞建华; 孙承休; 刘柯林; 高中林; 王启明
1999
Source Publication发光学报
Volume20Issue:1Pages:40
Abstract硅基MIS隧道发光二极管为制造用于超大规模集成电路的硅基发光器件提供了可能性。报道了MIS隧道发光二极管(MISLETD)的制作过程、电流-电压和发射光谱特性,讨论了负阻现象和发光机理。
metadata_83东南大学电子工程系;中科院半导体所
Subject Area光电子学
Funding Organization国家自然科学基金,集成光电子国家重点联合实验室基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:582204
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18539
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
俞建华,孙承休,刘柯林,等. 硅基MIS隧道二极管的研究[J]. 发光学报,1999,20(1):40.
APA 俞建华,孙承休,刘柯林,高中林,&王启明.(1999).硅基MIS隧道二极管的研究.发光学报,20(1),40.
MLA 俞建华,et al."硅基MIS隧道二极管的研究".发光学报 20.1(1999):40.
Files in This Item:
File Name/Size DocType Version Access License
5317.pdf(144KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[俞建华]'s Articles
[孙承休]'s Articles
[刘柯林]'s Articles
Baidu academic
Similar articles in Baidu academic
[俞建华]'s Articles
[孙承休]'s Articles
[刘柯林]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[俞建华]'s Articles
[孙承休]'s Articles
[刘柯林]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.