SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
掺铒SiO_x1.54μm强的室温光致发光
陈维德; 马智训; 许振嘉; 何杰; 顾诠; 梁建军
1999
Source Publication发光学报
Volume20Issue:1Pages:55
Abstract采用等离子化学汽相淀积方法,改变SiH_4和N_2O的流量比制备含有不同氧浓度的SiO_x。用离子注入方法将铒掺入SiO_x,经300~935℃快速热退火,在波长1.54μ处观察到很强的室温光致发光(PL)。发光强度随氧含量和激发功率增加而增加,与SiO_x的微结构有非常密切的关系。对可能的发光机理进行了讨论。
metadata_83中科院半导体所
Subject Area半导体材料
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:582208
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18537
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
陈维德,马智训,许振嘉,等. 掺铒SiO_x1.54μm强的室温光致发光[J]. 发光学报,1999,20(1):55.
APA 陈维德,马智训,许振嘉,何杰,顾诠,&梁建军.(1999).掺铒SiO_x1.54μm强的室温光致发光.发光学报,20(1),55.
MLA 陈维德,et al."掺铒SiO_x1.54μm强的室温光致发光".发光学报 20.1(1999):55.
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