SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
镶嵌型纳米锗的制备新方法及其光致发光研究
徐骏; 陈坤基; 黄信凡; 贺振宏; 韩和相; 汪兆平; 李国华
1999
Source Publication发光学报
Volume20Issue:3Pages:262
Abstract报道了通过热氧化氢化非晶锗硅薄膜和氢化非晶硅/氢化非晶锗多层膜以制备镶嵌于二氧化硅中纳米锗材料的新方法。研究结果表明
metadata_83南京大学;南京大学物理系;中科院半导体所
Subject Area半导体材料
Funding Organization国家自然科学基金,江苏省自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:582252
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18531
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
徐骏,陈坤基,黄信凡,等. 镶嵌型纳米锗的制备新方法及其光致发光研究[J]. 发光学报,1999,20(3):262.
APA 徐骏.,陈坤基.,黄信凡.,贺振宏.,韩和相.,...&李国华.(1999).镶嵌型纳米锗的制备新方法及其光致发光研究.发光学报,20(3),262.
MLA 徐骏,et al."镶嵌型纳米锗的制备新方法及其光致发光研究".发光学报 20.3(1999):262.
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