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氧、硼、磷掺杂对氢化非晶硅中铒1.54μm发光的作用
梁建军; 王永谦; 陈维德; 王占国; 常勇
2000
Source Publication发光学报
Volume21Issue:3Pages:196
Abstract利用等离子体增强化学气相淀积(PECVD)技术生长氧、硼、磷掺杂的氢化非晶硅薄膜。在室温下注入铒离子后研究三种掺杂元素对铒离子发光的作用。室温下观察到很强的光致发光现象。氧的引入并且和铒离子形成发光中心,提高了铒离子的发光强度。退火实验表明氧、硼、磷的掺杂补偿了材料中的缺陷,提高了氢的逃逸温度,改善材料的热稳定性,使材料的退火温度因掺杂元素的加入而提高,铒的发光得到增强。讨论了铒离子的发光机制。
metadata_83中科院半导体所;中科院上海技术物理所
Subject Area半导体材料
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:582320
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18527
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
梁建军,王永谦,陈维德,等. 氧、硼、磷掺杂对氢化非晶硅中铒1.54μm发光的作用[J]. 发光学报,2000,21(3):196.
APA 梁建军,王永谦,陈维德,王占国,&常勇.(2000).氧、硼、磷掺杂对氢化非晶硅中铒1.54μm发光的作用.发光学报,21(3),196.
MLA 梁建军,et al."氧、硼、磷掺杂对氢化非晶硅中铒1.54μm发光的作用".发光学报 21.3(2000):196.
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