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非共振激发条件下微腔中激子自发辐射的时间分辨光谱
刘宝利; 徐仲英; 王炳新; 邓元明; 杨富华
2000
Source Publication发光学报
Volume21Issue:4Pages:299
Abstract低温下,测量了InGaAs量子阱平面微腔的时间分辨光谱。在非共振激发条件下,观察到上下两支腔极化激元光荧光衰退时间与失谐无关;下支腔极化激元光荧光的上升时间也与失谐无关;而上支腔极化激元光荧光的上升时间却与失谐有强烈的依赖关系,随着从负失谐到正失谐的增加,上升时间逐渐减小。对实验结果的物理根源进行了讨论。
metadata_83中科院半导体所
Subject Area半导体物理
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:582343
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18525
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
刘宝利,徐仲英,王炳新,等. 非共振激发条件下微腔中激子自发辐射的时间分辨光谱[J]. 发光学报,2000,21(4):299.
APA 刘宝利,徐仲英,王炳新,邓元明,&杨富华.(2000).非共振激发条件下微腔中激子自发辐射的时间分辨光谱.发光学报,21(4),299.
MLA 刘宝利,et al."非共振激发条件下微腔中激子自发辐射的时间分辨光谱".发光学报 21.4(2000):299.
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