SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
In原子掺入对GaInNAs/GaAs单量子阱光致发光的影响
王志路; 张志伟; 孙宝权
2001
Source Publication发光学报
Volume22Issue:2Pages:151
Abstract研究了In掺入GaNAs/GaAs单量子阱对其带间和低于带边发光性质的影响。实验结果显示,随着In浓度的增加,GaInNAs/GaAs量子阱带间发光得到改善,低于带边的发光强度大大地减小。这是由于GaInNAs合金生长在GaAs衬底上,为补偿In和N原子尺度的差异,N原子更倾向于与In原子形成共价健。GaInNAs/GaAs单量子阱的光调制光谱证实了高能端发光峰来自本征的带边发光。
metadata_83河北省唐山师范学校;内蒙古民族大学;中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:582398
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18521
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
王志路,张志伟,孙宝权. In原子掺入对GaInNAs/GaAs单量子阱光致发光的影响[J]. 发光学报,2001,22(2):151.
APA 王志路,张志伟,&孙宝权.(2001).In原子掺入对GaInNAs/GaAs单量子阱光致发光的影响.发光学报,22(2),151.
MLA 王志路,et al."In原子掺入对GaInNAs/GaAs单量子阱光致发光的影响".发光学报 22.2(2001):151.
Files in This Item:
File Name/Size DocType Version Access License
5308.pdf(117KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[王志路]'s Articles
[张志伟]'s Articles
[孙宝权]'s Articles
Baidu academic
Similar articles in Baidu academic
[王志路]'s Articles
[张志伟]'s Articles
[孙宝权]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[王志路]'s Articles
[张志伟]'s Articles
[孙宝权]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.