SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
MOCVD生长的未掺杂的In_(1-x)Ga_xP中的本征缺陷
王海龙; 封松林
1999
Source Publication光电子·激光
Volume10Issue:4Pages:344
metadata_83中科院半导体所;曲阜师范大学物理系
Subject Area半导体材料
Funding Organization国家重点实验室资助
Indexed ByCSCD
Language中文
CSCD IDCSCD:599581
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18507
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
王海龙,封松林. MOCVD生长的未掺杂的In_(1-x)Ga_xP中的本征缺陷[J]. 光电子·激光,1999,10(4):344.
APA 王海龙,&封松林.(1999).MOCVD生长的未掺杂的In_(1-x)Ga_xP中的本征缺陷.光电子·激光,10(4),344.
MLA 王海龙,et al."MOCVD生长的未掺杂的In_(1-x)Ga_xP中的本征缺陷".光电子·激光 10.4(1999):344.
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