SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
单晶硅中铒点缺陷及Er-O复合缺陷电子结构的EHMO计算
薛俊明; 刘志钢; 孙钟林; 周伟; 赵颖; 吴春亚; 李桂华
1999
Source Publication光电子·激光
Volume10Issue:5Pages:419
Abstract本文采用集团模型和推广的Hucket分子轨道理论(EHMO)计算c-Si中Er点缺陷及Er-O复合缺陷的原子构型及电子结构。计算结果符合实验及一些文献的第一性原理计算结果,解释了Er有c-Si中的发光特性。
metadata_83南开大学光电子薄膜器件与技术所;中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:599603
Date Available2010-11-23
Citation statistics
Cited Times:1[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18505
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
薛俊明,刘志钢,孙钟林,等. 单晶硅中铒点缺陷及Er-O复合缺陷电子结构的EHMO计算[J]. 光电子·激光,1999,10(5):419.
APA 薛俊明.,刘志钢.,孙钟林.,周伟.,赵颖.,...&李桂华.(1999).单晶硅中铒点缺陷及Er-O复合缺陷电子结构的EHMO计算.光电子·激光,10(5),419.
MLA 薛俊明,et al."单晶硅中铒点缺陷及Er-O复合缺陷电子结构的EHMO计算".光电子·激光 10.5(1999):419.
Files in This Item:
File Name/Size DocType Version Access License
5300.pdf(388KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[薛俊明]'s Articles
[刘志钢]'s Articles
[孙钟林]'s Articles
Baidu academic
Similar articles in Baidu academic
[薛俊明]'s Articles
[刘志钢]'s Articles
[孙钟林]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[薛俊明]'s Articles
[刘志钢]'s Articles
[孙钟林]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.