SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
用Z扫描法测量a-Si/SiO_2多量子阱材料非线性折射率
周赢武; 郭亨群; 成步文
1999
Source Publication光电子·激光
Volume10Issue:5Pages:431
metadata_83华侨大学;中科院半导体所
Subject Area半导体材料
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:599606
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18503
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
周赢武,郭亨群,成步文. 用Z扫描法测量a-Si/SiO_2多量子阱材料非线性折射率[J]. 光电子·激光,1999,10(5):431.
APA 周赢武,郭亨群,&成步文.(1999).用Z扫描法测量a-Si/SiO_2多量子阱材料非线性折射率.光电子·激光,10(5),431.
MLA 周赢武,et al."用Z扫描法测量a-Si/SiO_2多量子阱材料非线性折射率".光电子·激光 10.5(1999):431.
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