SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
多量子阱光开关器件的激子吸收及光调制特性
陈弘达; 陈志标; 杜云; 黄永箴; 吴荣汉
2000
Source Publication光电子·激光
Volume11Issue:2Pages:143
Abstract分析了GaAs/AlGaAs半导体多量子阱光开关器件的室温激子吸收行为及光调制特性,优化设计了多量子阱结构,研制出常通型和常关型两种类型光开关器件,并对器件的光调制特性进行了测量与研究。实验得出的结构与理论计算相符合。
metadata_83中科院半导体所
Subject Area光电子学
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:599694
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18495
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
陈弘达,陈志标,杜云,等. 多量子阱光开关器件的激子吸收及光调制特性[J]. 光电子·激光,2000,11(2):143.
APA 陈弘达,陈志标,杜云,黄永箴,&吴荣汉.(2000).多量子阱光开关器件的激子吸收及光调制特性.光电子·激光,11(2),143.
MLA 陈弘达,et al."多量子阱光开关器件的激子吸收及光调制特性".光电子·激光 11.2(2000):143.
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