SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
缀饰激子在半导体微腔中的辐射
刘世安; 林世鸣; 康学军; 张光斌; 程澎; 王启明
2000
Source Publication光电子·激光
Volume11Issue:3Pages:221
Abstract建立了半导体微腔的缀饰激子模型。在VCSEL器件量子阱中的激子首先通过内电磁场与腔耦合,形成缀饰态。而后作为多粒子过程,缀饰激子与腔内真空场耦合产生辐射。通过QED方法,得到偶极子辐射密度方程和系统能量衰变方程。
metadata_83中科院半导体所
Subject Area光电子学
Funding Organization国家自然科学基金,国家863计划,国家863计划
Indexed ByCSCD
Language中文
CSCD IDCSCD:599716
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18493
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
刘世安,林世鸣,康学军,等. 缀饰激子在半导体微腔中的辐射[J]. 光电子·激光,2000,11(3):221.
APA 刘世安,林世鸣,康学军,张光斌,程澎,&王启明.(2000).缀饰激子在半导体微腔中的辐射.光电子·激光,11(3),221.
MLA 刘世安,et al."缀饰激子在半导体微腔中的辐射".光电子·激光 11.3(2000):221.
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