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由浅离子注入实现的MQW混合
朱洪亮; 韩德俊
2000
Source Publication光电子·激光
Volume11Issue:3Pages:255
Abstract用浅P~+离子注入InGaAs/InGaAsP应变多量子阱(MQW)激光器结构,经H_2/N_2混合气氛下的快速退火,体内MQW层发生组份混合,导致器件的带隙波长蓝移,结构的光荧光(PL)峰值波长向短波方向移动了76 nm。
metadata_83中科院半导体所;北京师范大学低能核物理所
Subject Area半导体材料
Funding Organization国家863计划
Indexed ByCSCD
Language中文
CSCD IDCSCD:599726
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18491
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
朱洪亮,韩德俊. 由浅离子注入实现的MQW混合[J]. 光电子·激光,2000,11(3):255.
APA 朱洪亮,&韩德俊.(2000).由浅离子注入实现的MQW混合.光电子·激光,11(3),255.
MLA 朱洪亮,et al."由浅离子注入实现的MQW混合".光电子·激光 11.3(2000):255.
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