SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
In_(0.4)Ga_(0.6)As/GaAs自组织量子点的光伏谱温度特性
吴正云; 陈主荣; 黄启圣; 姜卫红; 卢励吾; 王占国
2000
Source Publication光电子·激光
Volume11Issue:4Pages:366
Abstract采用无需在样品上制备电极的电容耦合的光伏谱方法,实验测量了In_(0.4)Ga_(0.6)As/GaAs自组织量子点在不同的温度下的光伏谱,对测量谱峰进行了指认,研究了量子点谱峰能量位置随温度的依赖关系。实验结果表明,量子点具有与体材料及二维体系不同的温度特性,对实验所测样品,其激子峰能量随温度增加而红移的速率约为GaAs体材料带隙变化的1.4倍。
metadata_83厦门大学物理系;中科院半导体所
Subject Area半导体材料
Funding Organization福建省自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:599759
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18487
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
吴正云,陈主荣,黄启圣,等. In_(0.4)Ga_(0.6)As/GaAs自组织量子点的光伏谱温度特性[J]. 光电子·激光,2000,11(4):366.
APA 吴正云,陈主荣,黄启圣,姜卫红,卢励吾,&王占国.(2000).In_(0.4)Ga_(0.6)As/GaAs自组织量子点的光伏谱温度特性.光电子·激光,11(4),366.
MLA 吴正云,et al."In_(0.4)Ga_(0.6)As/GaAs自组织量子点的光伏谱温度特性".光电子·激光 11.4(2000):366.
Files in This Item:
File Name/Size DocType Version Access License
5291.pdf(332KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[吴正云]'s Articles
[陈主荣]'s Articles
[黄启圣]'s Articles
Baidu academic
Similar articles in Baidu academic
[吴正云]'s Articles
[陈主荣]'s Articles
[黄启圣]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[吴正云]'s Articles
[陈主荣]'s Articles
[黄启圣]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.