SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
InGaAs/GaAs多量子阱SEED设计和特性研究
邓晖; 陈弘达; 梁琨; 杜云; 唐君; 黄永箴; 潘钟; 马骁宇; 吴荣汉; 王启明
2001
Source Publication光电子·激光
Volume12Issue:3Pages:222
Abstract分析计算了InGaAs/GaAs多量子阱(SEED)的激子吸收行为,对器件的多量子阱及谐振腔结构进行了设计和理论分析, 用MOCVD系统生长了多量子阱外延材料,并且对器件的反射谱和光电流谱特性进行了测试。
metadata_83中科院半导体所
Subject Area光电子学
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:599906
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18483
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
邓晖,陈弘达,梁琨,等. InGaAs/GaAs多量子阱SEED设计和特性研究[J]. 光电子·激光,2001,12(3):222.
APA 邓晖.,陈弘达.,梁琨.,杜云.,唐君.,...&王启明.(2001).InGaAs/GaAs多量子阱SEED设计和特性研究.光电子·激光,12(3),222.
MLA 邓晖,et al."InGaAs/GaAs多量子阱SEED设计和特性研究".光电子·激光 12.3(2001):222.
Files in This Item:
File Name/Size DocType Version Access License
5289.pdf(301KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[邓晖]'s Articles
[陈弘达]'s Articles
[梁琨]'s Articles
Baidu academic
Similar articles in Baidu academic
[邓晖]'s Articles
[陈弘达]'s Articles
[梁琨]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[邓晖]'s Articles
[陈弘达]'s Articles
[梁琨]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.