InGaN/AlGaN双异质结蓝光和绿光发光二极管

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	InGaN/AlGaN双异质结蓝光和绿光发光二极管
	陆大成; 刘祥林; 韩培德; 王晓晖; 汪度; 袁海荣
	2000
Source Publication	高技术通讯
Volume	10 Issue:5 Pages:43
metadata_83	中科院半导体所
Subject Area	半导体材料
Funding Organization	国家863计划
Indexed By	CSCD
Language	中文
CSCD ID	CSCD:604710
Date Available	2010-11-23
Citation statistics	Cited Times:1[CSCD] [CSCD Record]
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/18469
Collection	中国科学院半导体研究所（2009年前）
Recommended Citation GB/T 7714	陆大成,刘祥林,韩培德,等. InGaN/AlGaN双异质结蓝光和绿光发光二极管[J]. 高技术通讯,2000,10(5):43.
APA	陆大成,刘祥林,韩培德,王晓晖,汪度,&袁海荣.(2000).InGaN/AlGaN双异质结蓝光和绿光发光二极管.高技术通讯,10(5),43.
MLA	陆大成,et al."InGaN/AlGaN双异质结蓝光和绿光发光二极管".高技术通讯 10.5(2000):43.

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