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InGaN/AlGaN双异质结蓝光和绿光发光二极管 | |
陆大成; 刘祥林; 韩培德![]() | |
2000 | |
Source Publication | 高技术通讯
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Volume | 10Issue:5Pages:43 |
metadata_83 | 中科院半导体所 |
Subject Area | 半导体材料 |
Funding Organization | 国家863计划 |
Indexed By | CSCD |
Language | 中文 |
CSCD ID | CSCD:604710 |
Date Available | 2010-11-23 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/18469 |
Collection | 中国科学院半导体研究所(2009年前) |
Recommended Citation GB/T 7714 | 陆大成,刘祥林,韩培德,等. InGaN/AlGaN双异质结蓝光和绿光发光二极管[J]. 高技术通讯,2000,10(5):43. |
APA | 陆大成,刘祥林,韩培德,王晓晖,汪度,&袁海荣.(2000).InGaN/AlGaN双异质结蓝光和绿光发光二极管.高技术通讯,10(5),43. |
MLA | 陆大成,et al."InGaN/AlGaN双异质结蓝光和绿光发光二极管".高技术通讯 10.5(2000):43. |
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5282.pdf(150KB) | 限制开放 | -- | Application Full Text |
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