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高迁移率AlGaN-GaN二维电子气 | |
刘祥林; 王成新; 韩培德![]() | |
2000 | |
Source Publication | 高技术通讯
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Volume | 10Issue:6Pages:13 |
metadata_83 | 中科院半导体所 |
Subject Area | 半导体材料 |
Funding Organization | 国家863计划,国家自然科学基金 |
Indexed By | CSCD |
Language | 中文 |
CSCD ID | CSCD:604733 |
Date Available | 2010-11-23 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/18467 |
Collection | 中国科学院半导体研究所(2009年前) |
Recommended Citation GB/T 7714 | 刘祥林,王成新,韩培德. 高迁移率AlGaN-GaN二维电子气[J]. 高技术通讯,2000,10(6):13. |
APA | 刘祥林,王成新,&韩培德.(2000).高迁移率AlGaN-GaN二维电子气.高技术通讯,10(6),13. |
MLA | 刘祥林,et al."高迁移率AlGaN-GaN二维电子气".高技术通讯 10.6(2000):13. |
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5281.pdf(153KB) | 限制开放 | -- | Application Full Text |
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