SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
高迁移率AlGaN-GaN二维电子气
刘祥林; 王成新; 韩培德
2000
Source Publication高技术通讯
Volume10Issue:6Pages:13
metadata_83中科院半导体所
Subject Area半导体材料
Funding Organization国家863计划,国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:604733
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18467
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
刘祥林,王成新,韩培德. 高迁移率AlGaN-GaN二维电子气[J]. 高技术通讯,2000,10(6):13.
APA 刘祥林,王成新,&韩培德.(2000).高迁移率AlGaN-GaN二维电子气.高技术通讯,10(6),13.
MLA 刘祥林,et al."高迁移率AlGaN-GaN二维电子气".高技术通讯 10.6(2000):13.
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