SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
P型GaN和AlGaN外延材料的制备
刘祥林; 王成新; 韩培德; 陆大成; 王晓晖; 汪度; 王良臣
2000
Source Publication高技术通讯
Volume10Issue:8Pages:26
Abstract研究了MOVPE方法外延P型GaN和Al0.13 Ga0.87N的生长工艺,包括掺杂剂量和热退火条件,对材料电学性质的影响。得到了性能优良的P型材料,并研制了InGaN/AlGaN双异质结蓝光发光二极管。
metadata_83中科院半导体所
Subject Area半导体材料
Funding Organization国家863计划,国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:604794
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18463
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
刘祥林,王成新,韩培德,等. P型GaN和AlGaN外延材料的制备[J]. 高技术通讯,2000,10(8):26.
APA 刘祥林.,王成新.,韩培德.,陆大成.,王晓晖.,...&王良臣.(2000).P型GaN和AlGaN外延材料的制备.高技术通讯,10(8),26.
MLA 刘祥林,et al."P型GaN和AlGaN外延材料的制备".高技术通讯 10.8(2000):26.
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