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带有腔面非注入区的大功率808nm GaAs/AlGaAs激光二极管列阵
方高瞻; 肖建伟; 马骁宇; 谭满清; 刘宗顺; 刘素平; 冯小明
2000
Source Publication高技术通讯
Volume10Issue:12Pages:9
metadata_83中科院半导体所国家光电技术研究中心
Subject Area半导体器件
Funding Organization国家杰出青年基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:604906
Date Available2010-11-23
Citation statistics
Cited Times:2[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18461
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
方高瞻,肖建伟,马骁宇,等. 带有腔面非注入区的大功率808nm GaAs/AlGaAs激光二极管列阵[J]. 高技术通讯,2000,10(12):9.
APA 方高瞻.,肖建伟.,马骁宇.,谭满清.,刘宗顺.,...&冯小明.(2000).带有腔面非注入区的大功率808nm GaAs/AlGaAs激光二极管列阵.高技术通讯,10(12),9.
MLA 方高瞻,et al."带有腔面非注入区的大功率808nm GaAs/AlGaAs激光二极管列阵".高技术通讯 10.12(2000):9.
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