SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
MOVPE生长InGaN/GaN单量子阱绿光LED
王晓晖; 刘祥林; 陆大成; 袁海荣; 韩培德; 汪度
2001
Source Publication高技术通讯
Volume11Issue:2Pages:38
metadata_83中科院半导体所
Subject Area半导体材料
Funding Organization国家863计划
Indexed ByCSCD
Language中文
CSCD IDCSCD:604966
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18459
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
王晓晖,刘祥林,陆大成,等. MOVPE生长InGaN/GaN单量子阱绿光LED[J]. 高技术通讯,2001,11(2):38.
APA 王晓晖,刘祥林,陆大成,袁海荣,韩培德,&汪度.(2001).MOVPE生长InGaN/GaN单量子阱绿光LED.高技术通讯,11(2),38.
MLA 王晓晖,et al."MOVPE生长InGaN/GaN单量子阱绿光LED".高技术通讯 11.2(2001):38.
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