SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
多种基底上溅射沉积ZnO薄膜的结构
贺洪波; 范正修; 姚振钰
1999
Source Publication功能材料与器件学报
Volume5Issue:1Pages:66
Abstract在玻璃基底踌地基底上用反应式直流磁控溅射法制备了ZnO薄膜。用AES和XRD对薄膜结构和组分进行测试,结果表明,五种基底上生长的ZnO薄膜在不同程度上都具有优良的纵向均匀性、明显的c轴择优取和向较高的结晶度,而硅基底上薄膜的结构普遍优于玻璃基底上沉积薄膜。
metadata_83中科院上海光学精密机械所;中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:607934
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18455
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
贺洪波,范正修,姚振钰. 多种基底上溅射沉积ZnO薄膜的结构[J]. 功能材料与器件学报,1999,5(1):66.
APA 贺洪波,范正修,&姚振钰.(1999).多种基底上溅射沉积ZnO薄膜的结构.功能材料与器件学报,5(1),66.
MLA 贺洪波,et al."多种基底上溅射沉积ZnO薄膜的结构".功能材料与器件学报 5.1(1999):66.
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