SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
InGaAs/InP中离子注入和新型HPT
李国辉; 杨茹; 于民; 韩卫; 曾一平
2000
Source Publication功能材料与器件学报
Volume6Issue:3Pages:259
metadata_83北京师范大学低能核物理;北京师范大学低能核物理所;中科院半导体所
Subject Area半导体材料
Funding Organization北京市基金,国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:608031
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18447
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
李国辉,杨茹,于民,等. InGaAs/InP中离子注入和新型HPT[J]. 功能材料与器件学报,2000,6(3):259.
APA 李国辉,杨茹,于民,韩卫,&曾一平.(2000).InGaAs/InP中离子注入和新型HPT.功能材料与器件学报,6(3),259.
MLA 李国辉,et al."InGaAs/InP中离子注入和新型HPT".功能材料与器件学报 6.3(2000):259.
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