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空间生长GaAs材料多孔部分的俄歇能谱分析与阴极荧光形貌观察
李韫言; 蔚燕华; 李成基
2000
Source Publication功能材料与器件学报
Volume6Issue:4Pages:332
Abstract在空间生长SI-GaAs的某些部位有汽泡产生,经俄歇分析,汽泡表面约有10nm的砷层,它从半绝缘砷化镓内部逸出,导致其成为半导体。用阴极荧光形貌观测了其多晶结构。
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:608050
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18437
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
李韫言,蔚燕华,李成基. 空间生长GaAs材料多孔部分的俄歇能谱分析与阴极荧光形貌观察[J]. 功能材料与器件学报,2000,6(4):332.
APA 李韫言,蔚燕华,&李成基.(2000).空间生长GaAs材料多孔部分的俄歇能谱分析与阴极荧光形貌观察.功能材料与器件学报,6(4),332.
MLA 李韫言,et al."空间生长GaAs材料多孔部分的俄歇能谱分析与阴极荧光形貌观察".功能材料与器件学报 6.4(2000):332.
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