SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
NH_3-MBE生长极化场二维电子气材料
孙殿照; 刘宏新; 王军喜; 王晓亮; 刘成海; 曾一平; 李晋闽; 林兰英
2000
Source Publication功能材料与器件学报
Volume6Issue:4Pages:350
Abstract介绍了用NH_3-MBE技术在蓝宝石C面上外延的高质量的GaN单层膜以及GaN/AlN/GaN极化感应二维电子气材料。外延膜都是N面材料。形成的二维电子气是“倒置二维电子气”。GaN单层膜的室温电子迁移率为300cm~2/Vs。二维电子气材料的迁移率为680cm~2/Vs(RT)和1700cm~2/Vs(77K),相应的二维电子气的面密度为3.2×10~(13)cm~(-2)(RT)和2.6×10~(13)cm~(-2)(77K)。
metadata_83中科院半导体所材料科学中心
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:608055
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18431
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
孙殿照,刘宏新,王军喜,等. NH_3-MBE生长极化场二维电子气材料[J]. 功能材料与器件学报,2000,6(4):350.
APA 孙殿照.,刘宏新.,王军喜.,王晓亮.,刘成海.,...&林兰英.(2000).NH_3-MBE生长极化场二维电子气材料.功能材料与器件学报,6(4),350.
MLA 孙殿照,et al."NH_3-MBE生长极化场二维电子气材料".功能材料与器件学报 6.4(2000):350.
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