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Ge_xSi_(1-x)/Si中应变的会聚束电子衍射研究
范缇文; 吴巨; 王占国
2000
Source Publication功能材料与器件学报
Volume6Issue:4Pages:403
Abstract介绍了会聚束电子衍射(CBED)技术与计算机模拟相结合测定Ge_xSi_(1-x)/Si化学梯度层中应变分布的实验结果,提供了一种高空间分辨率、高灵敏度,且适用于任何材料系中微区晶格常数测定及应变分布研究的技术途径。
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:608067
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18425
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
范缇文,吴巨,王占国. Ge_xSi_(1-x)/Si中应变的会聚束电子衍射研究[J]. 功能材料与器件学报,2000,6(4):403.
APA 范缇文,吴巨,&王占国.(2000).Ge_xSi_(1-x)/Si中应变的会聚束电子衍射研究.功能材料与器件学报,6(4),403.
MLA 范缇文,et al."Ge_xSi_(1-x)/Si中应变的会聚束电子衍射研究".功能材料与器件学报 6.4(2000):403.
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