SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
反应离子刻蚀工艺仿真模型的研究
陆建祖; 魏红振; 李玉鉴; 张永刚; 林世鸣; 余金中; 刘忠立
2000
Source Publication功能材料与器件学报
Volume6Issue:4Pages:420
Abstract以SF_6/N_2混合气体对Si反应离子刻蚀工艺研究为例提出干法刻蚀计算机工艺模拟的方法
metadata_83中国科学院半导体所
Subject Area微电子学
Funding Organization国家863计划
Indexed ByCSCD
Language中文
CSCD IDCSCD:608072
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18421
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
陆建祖,魏红振,李玉鉴,等. 反应离子刻蚀工艺仿真模型的研究[J]. 功能材料与器件学报,2000,6(4):420.
APA 陆建祖.,魏红振.,李玉鉴.,张永刚.,林世鸣.,...&刘忠立.(2000).反应离子刻蚀工艺仿真模型的研究.功能材料与器件学报,6(4),420.
MLA 陆建祖,et al."反应离子刻蚀工艺仿真模型的研究".功能材料与器件学报 6.4(2000):420.
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