SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
用硅离子注入方法制备的纳米硅的拉曼散射研究
汪兆平; 丁琨; 韩和相; 李国华
1999
Source Publication光散射学报
Volume11Issue:3Pages:231
metadata_83中科院半导体所
Subject Area半导体材料
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:610629
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18413
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
汪兆平,丁琨,韩和相,等. 用硅离子注入方法制备的纳米硅的拉曼散射研究[J]. 光散射学报,1999,11(3):231.
APA 汪兆平,丁琨,韩和相,&李国华.(1999).用硅离子注入方法制备的纳米硅的拉曼散射研究.光散射学报,11(3),231.
MLA 汪兆平,et al."用硅离子注入方法制备的纳米硅的拉曼散射研究".光散射学报 11.3(1999):231.
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