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反射率小于10~(-4)的1310nm光电子器件增透膜技术的研究
谭满清; 茅冬生; 王仲明
1999
Source Publication光学学报
Volume19Issue:2Pages:235
Abstract阐述了电子回旋共振等离子体化学气相沉积法淀积半导体器件端面光学膜的优良特性。介绍了淀积反射率小于10~(-4)的1310nm半导体激光器端面增透膜技术,并对这种技术的优点和两端淀积增透膜后的激光器特性进行了讨论。
metadata_83中科院半导体所
Subject Area光电子学
Indexed ByCSCD
Language中文
CSCD IDCSCD:616085
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18399
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
谭满清,茅冬生,王仲明. 反射率小于10~(-4)的1310nm光电子器件增透膜技术的研究[J]. 光学学报,1999,19(2):235.
APA 谭满清,茅冬生,&王仲明.(1999).反射率小于10~(-4)的1310nm光电子器件增透膜技术的研究.光学学报,19(2),235.
MLA 谭满清,et al."反射率小于10~(-4)的1310nm光电子器件增透膜技术的研究".光学学报 19.2(1999):235.
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