SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
纳米晶Si在高压下的电学性质与金属化相变
鲍忠兴; 何宇亮; 王卫乡; 柳翠霞; 陈伟
1999
Source Publication高压物理学报
Volume13Issue:2Pages:133
Abstract在金刚石压砧装置上,采用电阻和电容测量方法,研究了粒径为15~18nm和80nm的纳米晶Si在室温下、24GPa内的电阻、电容与压力的关系。实验结果表明,它们分别在19~17GPa和14GPa左右发生了金属化相变。
metadata_83中科院物理所;北京航空航天大学;华南师范大学;中科院半导体所
Subject Area半导体物理
Funding Organization半导体材料科学开放实验室基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:619662
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18389
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
鲍忠兴,何宇亮,王卫乡,等. 纳米晶Si在高压下的电学性质与金属化相变[J]. 高压物理学报,1999,13(2):133.
APA 鲍忠兴,何宇亮,王卫乡,柳翠霞,&陈伟.(1999).纳米晶Si在高压下的电学性质与金属化相变.高压物理学报,13(2),133.
MLA 鲍忠兴,et al."纳米晶Si在高压下的电学性质与金属化相变".高压物理学报 13.2(1999):133.
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