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高边模抑制比窄线宽的光纤光栅外腔半导体激光器
周凯明; 胡雄伟; 刘海涛; 葛璜; 安贵仁
2001
Source Publication光子学报
Volume30Issue:4Pages:478
Abstract从耦合腔理论出发分析了光纤光栅外腔半导体激光器的模式选择,得到了为达到稳定的高主边模抑制比所需的短外腔、短光纤光栅的器件设计原则。制作了两只光纤光栅外腔半导体激光器,Q_1为短外腔(<2mm)、短光纤光栅(4mm)结构,Q_2为长外腔(20mm)、长光纤光栅(17mm)结构。测量Q_1的主边模抑制比为35dB,Q_2的主边模抑制比为10dB。
metadata_83中科院半导体所
Subject Area光电子学
Indexed ByCSCD
Language中文
CSCD IDCSCD:621035
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18385
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
周凯明,胡雄伟,刘海涛,等. 高边模抑制比窄线宽的光纤光栅外腔半导体激光器[J]. 光子学报,2001,30(4):478.
APA 周凯明,胡雄伟,刘海涛,葛璜,&安贵仁.(2001).高边模抑制比窄线宽的光纤光栅外腔半导体激光器.光子学报,30(4),478.
MLA 周凯明,et al."高边模抑制比窄线宽的光纤光栅外腔半导体激光器".光子学报 30.4(2001):478.
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