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InAs自组织生长量子点的空穴俘获势垒
王海龙; 朱海军; 宁东; 陈枫; 封松林
1999
Source Publication红外与毫米波学报
Volume18Issue:5Pages:397
Abstract成功地用深能级瞬态谱(DLIS)研究了p型InAs自组织生长的量子点的电学性质,测得2.5原子层InAs量子点空穴基态能级在GaAs价带底上约0.09eV,该量子点在荷电状态发生变化时需要克服一个势垒,俘获势垒高度为0.26eV。首次利用DLTS测定了量子点空穴的基态能级和俘获势垒,相信对增加量子点性质的理解会起到有益的帮助。
metadata_83中科院半导体所
Subject Area半导体材料
Funding Organization国家攀登计划,国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:641245
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18373
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
王海龙,朱海军,宁东,等. InAs自组织生长量子点的空穴俘获势垒[J]. 红外与毫米波学报,1999,18(5):397.
APA 王海龙,朱海军,宁东,陈枫,&封松林.(1999).InAs自组织生长量子点的空穴俘获势垒.红外与毫米波学报,18(5),397.
MLA 王海龙,et al."InAs自组织生长量子点的空穴俘获势垒".红外与毫米波学报 18.5(1999):397.
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